2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold met

文件：39.3 Kbytes 页数：2 Pages

Ericsson

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20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor

Description The 20011 is an NPN common emitter UHF power transistor intended for 26.5 Vdc class A operation from 470 to 860 MHz. It is rated at 20 watts (p-sync) output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization en

文件：46.7 Kbytes 页数：3 Pages

Ericsson

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150 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivati

文件：44.51 Kbytes 页数：3 Pages

Ericsson

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15 Watts, 420-470 MHz RF Power Transistor

Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：44.57 Kbytes 页数：3 Pages

Ericsson

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40 Watts, 420-470 MHz RF Power Transistor

Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are

文件：44.87 Kbytes 页数：2 Pages

Ericsson

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25 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. It is specifically designed for high efficiency operation a

文件：44.94 Kbytes 页数：2 Pages

Ericsson

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB20038 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System

文件：26.72 Kbytes 页数：2 Pages

ASI

1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor

Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：40.58 Kbytes 页数：2 Pages

Ericsson

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6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor

Description The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：41.74 Kbytes 页数：2 Pages

Ericsson

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60 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：46.38 Kbytes 页数：3 Pages

Ericsson

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