9 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：41.88 Kbytes 页数：3 Pages

Ericsson

爱立信

0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：39.29 Kbytes 页数：2 Pages

Ericsson

爱立信

2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t

文件：385.02 Kbytes 页数：2 Pages

Ericsson

爱立信

60 Watts, 925-960 MHz Cellular Radio RF Power Transistor

Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：46.68 Kbytes 页数：3 Pages

Ericsson

爱立信

45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantatio

文件：639.55 Kbytes 页数：5 Pages

Ericsson

爱立信

9 Watts, 610-960 MHz UHF Power Transistor

Description The 20155 is an NPN common base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensur

文件：43.02 Kbytes 页数：3 Pages

Ericsson

爱立信

8 Watts, 1350-1850 MHz Microwave Power Transistor

Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure exc

文件：43.92 Kbytes 页数：3 Pages

Ericsson

爱立信

20 Watts, 1.35-1.85 GHz RF Power Transistor

Description The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：45.5 Kbytes 页数：3 Pages

Ericsson

爱立信

40 Watts, 470-900 MHz RF Power Transistor

Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：42.09 Kbytes 页数：2 Pages

Ericsson

爱立信

23 Watts, 675-925 MHz Common Base RF Power Transistor

Description The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：46.1 Kbytes 页数：3 Pages

Ericsson

爱立信