10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor

Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure exce

文件：617.37 Kbytes 页数：3 Pages

Ericsson

爱立信

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：99.58 Kbytes 页数：12 Pages

PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness •

文件：73.53 Kbytes 页数：12 Pages

PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：58.97 Kbytes 页数：8 Pages

PHI

飞利浦

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：99.58 Kbytes 页数：12 Pages

PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB23005X is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：52.46 Kbytes 页数：2 Pages

ASI

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：99.58 Kbytes 页数：12 Pages

PHI

飞利浦

Microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure

文件：88.56 Kbytes 页数：12 Pages

PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB32001X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. FEATURES INCLUDE: • Diffused Emitter Ballasting Resistor • Hermetic Flange Package • Gold Metelization

文件：18.57 Kbytes 页数：1 Pages

ASI

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：66.24 Kbytes 页数：12 Pages

PHI

飞利浦