NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：99.58 Kbytes 页数：12 Pages

PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB23005X is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：52.46 Kbytes 页数：2 Pages

ASI

NPN microwave power transistors

恩XP

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor