15 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications, it may be used for both CW and PEP applications. Ion implantation, nitride surface pass

文件：512.87 Kbytes 页数：3 Pages

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6.5 Watts, 1.62-1.66 GHz RF Power Transistor

Description The 20228 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：447.08 Kbytes 页数：3 Pages

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45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantatio

文件：152.07 Kbytes 页数：4 Pages

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70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor

Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a final stage in Wide CDMA systems. Ion implantation, nitride surface passivation and

文件：127.31 Kbytes 页数：5 Pages

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150 Watts, 470-860 MHz UHF TV Power Transistor

Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure

文件：541.3 Kbytes 页数：4 Pages

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12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor

Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensur

文件：449.73 Kbytes 页数：3 Pages

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35 Watts, 2.1-2.2 GHz Wide-Band CDMA Power Transistor

Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in Wide CDMA or TDMA syst

文件：303.8 Kbytes 页数：5 Pages

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0.7 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor

Description The 20248 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：446.83 Kbytes 页数：3 Pages

Ericsson

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2.5 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor

Description The 20249 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：624.44 Kbytes 页数：3 Pages

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6 Watts, 915-960 MHz Cellular Radio RF Power Transistor

Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t

文件：209.52 Kbytes 页数：3 Pages

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