60 Watts, 850-960 MHz RF Power Transistor

Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization ar

文件：47.22 Kbytes 页数：3 Pages

Ericsson

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30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：261.38 Kbytes 页数：5 Pages

Ericsson

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25 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：43.98 Kbytes 页数：2 Pages

Ericsson

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90 Watts, 1400-1600 MHz RF Power Transistor

Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：563.79 Kbytes 页数：4 Pages

Ericsson

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55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor

Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are us

文件：579.57 Kbytes 页数：4 Pages

Ericsson

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5 Watts, 1.78-1.92 GHz RF Power Transistor

Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metal

文件：47.89 Kbytes 页数：3 Pages

Ericsson

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150 Watts, 925-960 MHz Cellular Radio RF Power Transistor

Description The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t

文件：49.05 Kbytes 页数：3 Pages

Ericsson

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0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

文件：201.33 Kbytes 页数：3 Pages

Ericsson

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2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t

文件：43.21 Kbytes 页数：2 Pages

Ericsson

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4 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t

文件：43.42 Kbytes 页数：2 Pages

Ericsson

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