4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor

Description The 20188 is an NPN common emitter UHF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 4 watts output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to en

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UHF TV Linear Power Transistor Cellular Radio RF Power Transistor

Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are us

文件：47.4 Kbytes 页数：3 Pages

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175 Watts, 470-806 MHz Digital Television Power Transistor

Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically intended to operate uncorrected at 125 watts P-Sync (tested to EIA Standard 4.1.3, Sectio

文件：549.59 Kbytes 页数：4 Pages

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12 Watts, 1.78-1.92 GHz RF Power Transistor

Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ens

文件：424.66 Kbytes 页数：3 Pages

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60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor

Description The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are us

文件：519.69 Kbytes 页数：3 Pages

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150 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used t

文件：47.84 Kbytes 页数：3 Pages

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1.0 Watt, 380-500 MHz RF Power Transistor

Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure exc

文件：190.5 Kbytes 页数：3 Pages

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1.0 Watt, 470-860 MHz RF Power Transistor

Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excell

文件：380.48 Kbytes 页数：2 Pages

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6 Watts, 1.8-2.0 GHz RF Power Transistor

Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold met

文件：391.81 Kbytes 页数：2 Pages

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70 Watts, 925-960 MHz Cellular Radio RF Power Transistor

Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization a

文件：563.67 Kbytes 页数：4 Pages

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