PTB32001X规格书供应代理飞利浦Philips-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTB32001X	文件：66.24 Kbytes Page：12 Pages	NPN microwave power transistors DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides 文件：66.24 Kbytes 页数：12 Pages	PHI 飞利浦	PHI
PTB32001X	文件：18.57 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB32001X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. FEATURES INCLUDE: • Diffused Emitter Ballasting Resistor • Hermetic Flange Package • Gold Metelization 文件：18.57 Kbytes 页数：1 Pages	ASI	ASI
PTB32001X	文件：300 bytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR	ASI Semiconductor	ASI Semiconductor
GPF32001A	文件：903.58 Kbytes Page：21 Pages	Advanced 16-Bit SoC with u nSP 2.0 文件：903.58 Kbytes 页数：21 Pages	GENERALPLUS 凌通科技	GENERALPLUS
GPF32001A-NnnV-C	文件：903.58 Kbytes Page：21 Pages	Advanced 16-Bit SoC with u nSP 2.0 文件：903.58 Kbytes 页数：21 Pages	GENERALPLUS 凌通科技	GENERALPLUS
LAS-32001DLF	文件：218.82 Kbytes Page：3 Pages	Low Cost Semi-Precision Power Wirewound Resistor 文件：218.82 Kbytes 页数：3 Pages	IRCTT	IRCTT

更多PTB32001X供应商更新时间2025-12-24 8:31:00