PTB32001X中文资料PDF规格书
PTB32001X规格书详情
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
产品属性
- 型号：
PTB32001X
- 制造商：
ASI
- 制造商全称：
ASI
- 功能描述：
NPN SILICON RF POWER TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEOPHOTOI |
1836+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
N/A |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
HEPHOTONICS |
22+ |
HEPHOTONICS |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
Infineon |
2339+ |
SOP |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ERICSSON/爱立信 |
23+ |
299 |
现货供应 |
询价 | |||
NEPHOTO |
23+ |
DIP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NEOPHOTOI |
24+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NEPHOTO |
22+23+ |
DIP |
35268 |
绝对原装正品全新进口深圳现货 |
询价 | ||
N/A |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
NEOPHOTOI |
24+ |
SMD |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 |
