PTB20080中文资料爱立信数据手册PDF规格书
PTB20080规格书详情
描述 Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100 lot traceability is standard.
• 25 Watts, 1.6–1.7 GHz
• Class AB Characteristics
• 40 Collector Efficiency at 25 Watts
• Gold Metallization
• Silicon Nitride Passivated
产品属性
- 型号：
PTB20080
- 制造商：
ERICSSON
- 制造商全称：
Ericsson
- 功能描述：
25 Watts, 1.6-1.7 GHz RF Power Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KODENSHI |
2026+ |
65428 |
百分百原装现货 实单必成 |
询价 | |||
KODENSHI |
24+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
KODENSHI原 |
25+23+ |
27289 |
绝对原装正品全新进口深圳现货 |
询价 | |||
INFINEON |
23+ |
高频管 |
655 |
专营高频管模块,全新原装! |
询价 | ||
ERICSSON/爱立信 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
ERICSSON |
24+ |
223 |
询价 | ||||
ERICSSON/爱立信 |
22+ |
TO62 |
17800 |
原装正品 |
询价 | ||
INFINEON |
23+ |
NA |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
23+ |
NA |
7000 |
询价 | |||
ERICSSON/爱立信 |
24+ |
340 |
现货供应 |
询价 |
