175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor

Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliab

文件：44.64 Kbytes 页数：3 Pages

ERICSSON

爱立信

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz. FEATURES: • 175 W, 470-860 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System

文件：49.39 Kbytes 页数：1 Pages

ASI

175 Watts P-Sync, 470–860 MHz UHF TV Power Transistor

Description\nThe 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliabil

Ericsson

爱立信

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz.FEATURES:\n• 175 W, 470-860 MHz\n• Silicon Nitride Passivated\n• Omnigold™ Metalization System

ASI Semiconductor