PMD9050D

Marking：9G；Package：SC-74；MOSFET driver

Features *General-purposetransistorandhigh-speedswitchingdiodeasdriver *Silicon-controlledswitchtobypassthedrivertransistor *Application-optimizedpinout *Internalconnectionstominimizelayouteffort *Space-savingsolution *Reducescomponentcount

PMDPB30XN-TP

20V Dual N-Channel Enhancement Mode Power MOSFET

Feature Superhighdensitycelldesignforextremely lowRDS(ON) ®DFN2X2-6Lpackagedesign

PMDPB55XP

Marking：1Z；Package：SOT1118；20 V, dual P-channel Trench MOSFET

1.1Generaldescription DualP-channelenhancementmodeField-EffectTransistor(FET)inasmallandleadless ultrathinDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching TrenchMOSFETtechnology

PMDPB58UPE

Marking：2A；Package：SOT1118；20 V dual P-channel Trench MOSFET

1.Generaldescription Dualsmall-signalP-channelenhancementmodeField-EffectTransistor(FET)ina leadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching

PMDPB70XP

Marking：1H；Package：SOT1118；30 V, dual P-channel Trench MOSFET

1.1Generaldescription DualP-channelenhancementmodeField-EffectTransistor(FET)inasmallandleadless ultrathinSOT1118Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching TrenchMOSFETtechnology Smallan

PMDPB70XPE

Marking：2B；Package：SOT1118；20 V dual P-channel Trench MOSFET

1.1Generaldescription Dualsmall-signalP-channelenhancementmodeField-EffectTransistor(FET)ina leadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching TrenchMOSFETtechn

PMDPB85UPE

Marking：2C；Package：SOT1118；20 V dual P-channel Trench MOSFET

1.1Generaldescription Dualsmall-signalP-channelenhancementmodeField-EffectTransistor(FET)ina leadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Lowthresholdvoltage Veryfastswitchi

PMDS

Packaging specifications

surfacemountingtype

PMDT

Packaging specifications

surfacemountingtype

PMDT290UCE

Marking：AF；Package：SOT666；20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)inanultrasmall andflatleadSOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Veryfastswitching •TrenchMOSFETtechnology •ESD