丝印：2A；Package：SOT-23；General Purpose Transistors PNP Silicon

1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

文件：474.61 Kbytes 页数：5 Pages

FS

丝印：2A；Package：HRP-5；2A Low Dropout Voltage Regulator with Shut Down Switch

● General Description The BA00DD0xx and BD00CC0xx series are low-saturation regulators available for outputs up to 2A/1A. The output voltage can be arbitrarily configured using the external resistance. These series of LDO regulators are offered in a broad packaging lineup. This IC has a buil

文件：386.35 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：2A；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2A；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2A；Package：DFN0603；Small Signal Schottky Diodes

Features - Low forward voltage, typ. VF=0.33V - Ultra small mold type. - Low reverse current, typ. IR=0.3μA

文件：467.66 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：2A；Package：SOD-323；SMD ESD Protection Diode

Features - Peak power dissipation: 400W (8/20μs). - Working voltages: 3.3V. - Low leakage current. - Low capacitance. - Protects one directional I/O line. - Low clamping voltage. - IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact). - IEC61000-4-4 (EFT) 40A (5/50ns).

文件：470.73 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：2A；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 255~416 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line or power line(Bidirectional) Low clamping voltage Working voltages:3.3V ~ 48V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 3.3V ~ 18V); IEC61000-4-2 (ESD) ±15kV (air), ±15kV (contact):

文件：895.29 Kbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：2A；Package：SOT-563；Transient Voltage Suppressors for ESD Protection

Feature 230 Watts Peak Pulse Power per Line (tp=8/20μs) Protects up to two I/O lines & power line Low capacitance for high-speed interfaces Low clamping voltage Working Voltages : 5V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC610

文件：2.40306 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：2A；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 255~410 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line or power line Low Clamping Voltage Working Voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2(ESD) ±30kV

文件：2.21656 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：2A；Package：SOT-23；General Purpose Transistor

Features • General Purpose Transistor

文件：57.05 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司