MMBT3906-CAR

Marking：2A；Package：SOT-23；TRANSISTOR(PNP)

FEATURES ●WedeclarethatthematerialofproductcompliancewithRoHS requirementsandHalogenFree. ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable.

MMBT3906T

Marking：2A；Package：SOT-523；PN P Plastic-Encapsulate Transistors

FEATURES •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable •AlsoAvailableinLeadFreeVersion

MMBT3906W

Marking：2A；Package：SOT-323；PNP Transistor

■Features ●CollectorCurrentCapabilityIC=-0.2A ●CollectorEmitterVoltageVCEO=-40V ●ComplementarytoMMBT3904W)

NJM8190F3

Marking：2A；Package：SC-88A；Single Channel Low power Comparator

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to+125℃ ●InputOffsetVoltage3mVmax. ●SupplyCurrent0.5mAmax. ●OperatingVoltage+2Vto+36Vor±1Vto±18V ●IntegratedEMIfilter ●Low-levelOutputVoltage80mVtyp.(Isink=4mA) ●ResponseTime1.3μstyp. ●OpenCollectorO

NX6020CAKS

Marking：2A；Package：SOT363；60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET

1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)inaverysmall SOT363(SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Veryfastswitching •ElectroStat

PDTA123TE

Marking：2A；Package：SC-75；PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PESD2ETHAX-Q

Marking：2A；Package：SOT143B；Ultra low capacitance double rail-to-rail ESD protection diode

1.Generaldescription Ultralowcapacitancedoublerail-to-railElectroStaticDischarge(ESD)protectiondiodeinasmall SOT143BSurface-MountedDevice(SMD)plasticpackage. Thedeviceisdesignedtoprotecttwohigh-speeddatalinesorhigh-frequencysignallinesfromthe damagecausedby

PMBT3906

Marking：2A；Package：SOT23；PNP switching transistor

Featuresandbenefits Collector-emittervoltageVCEO=−40V CollectorcurrentcapabilityIC=−200mA

PMDPB58UPE

Marking：2A；Package：SOT1118；20 V dual P-channel Trench MOSFET

1.Generaldescription Dualsmall-signalP-channelenhancementmodeField-EffectTransistor(FET)ina leadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching

PMST3906

Marking：2A；Package：SOT323；40 V, 200 mA PNP switching transistor

1.1Generaldescription PNPswitchingtransistorinaSOT323(SC-70)verysmallSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PMST3904. 1.2Features nCollectorcurrent:IC£-200mA nCollector-emittervoltage:VCEO£-40V nVerysmallSMDplasticpackage 1.3Applications