丝印：2AE；Package：X2SON；DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

1 Features 1• Industry-Leading Low-Power Consumption • Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 μA (1.8 V) – SEL = High: 2.5 kHz Using 142 μA (1.8 V) • 1.65- to 5.5-V Operating VCC Range • High Magnetic Sensitivity: ±2 mT (Typical) • Robust Hysteresis: 4 mT (Typical) • Pu

文件：957.54 Kbytes 页数：25 Pages

TI

德州仪器

丝印：2AE；Package：X2SON；DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

1 Features 1• Industry-Leading Low-Power Consumption • Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 μA (1.8 V) – SEL = High: 2.5 kHz Using 142 μA (1.8 V) • 1.65- to 5.5-V Operating VCC Range • High Magnetic Sensitivity: ±2 mT (Typical) • Robust Hysteresis: 4 mT (Typical) • Pu

文件：957.54 Kbytes 页数：25 Pages

TI

德州仪器

丝印：2AE；Package：X2SON；DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

1 Features 1• Industry-Leading Low-Power Consumption • Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 μA (1.8 V) – SEL = High: 2.5 kHz Using 142 μA (1.8 V) • 1.65- to 5.5-V Operating VCC Range • High Magnetic Sensitivity: ±2 mT (Typical) • Robust Hysteresis: 4 mT (Typical) • Pu

文件：957.54 Kbytes 页数：25 Pages

TI

德州仪器

丝印：2AE；Package：WLCSP；1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

GENERAL DESCRIPTIONS The W25Q40EW (4M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code direct

文件：2.47779 Mbytes 页数：80 Pages

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