丝印：1Z；Package：SOT1118；20 V, dual P-channel Trench MOSFET

1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology

文件：1.63266 Mbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

20 V, dual P-channel Trench MOSFET

文件：884.73 Kbytes 页数：15 Pages

恩XP

20 V, dual P-channel Trench MOSFET

文件：884.73 Kbytes 页数：15 Pages

PHI

飞利浦

20 V, dual P-channel Trench MOSFET

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very fast switching\n• Trench MOSFET technology\n• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm\n• Exposed drain pad for excellent thermal conduction;

Nexperia

安世