METALIZED POLYPROPYLENE FILM CAPACITORS PMD Series: Radial Dipped

FEATURES •Low dissipation factor and high insulation resistance •High capacitance and dissipation factor stability •Non-inductive construction •Self-healing •Flame retardant epoxy resin coating (compliant to UL 94V-0)

文件：56.52 Kbytes 页数：1 Pages

RFE

RFE international

600V N-Channel MOSFETs

Features - High efficient switched mode power supplies - TV Power - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Adapter/charger - LED Lighting

文件：708.53 Kbytes 页数：5 Pages

POTENS

博盛半导体

650V N-Channel MOSFETs

Features - 650V,4A, RDS(ON) =2.4Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - High efficient switched mode power supplies - TV Power - Server Power Applications - Adapter/charger - LED Lighting

文件：1.03945 Mbytes 页数：5 Pages

POTENS

博盛半导体

800V N-Channel MOSFETs

Features - 800V,3.2A, RDS(ON) =3.9Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Networking - Load Switch - LED applications - Quick Charger

文件：1.00319 Mbytes 页数：5 Pages

POTENS

博盛半导体

650V N-Channel MOSFETs

Features - 650V,8A, RDS(ON) =1.2Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - High efficient switched mode power supplies - TV Power - Server Power Applications - Adapter/charger - LED Lighting

文件：1.0114 Mbytes 页数：5 Pages

POTENS

博盛半导体

METALIZED POLYPROPYLENE FILM CAPACITORS PMD Series: Radial Dipped

FEATURES •Low dissipation factor and high insulation resistance •High capacitance and dissipation factor stability •Non-inductive construction •Self-healing •Flame retardant epoxy resin coating (compliant to UL 94V-0)

文件：56.52 Kbytes 页数：1 Pages

RFE

RFE international

SILICON POWER DARLING TRANSISTORSl

SILICON POWER DARLINGTON TRANSISTORS

文件：151.09 Kbytes 页数：1 Pages

CENTRAL

SILICON POWER DARLING TRANSISTORSl

SILICON POWER DARLINGTON TRANSISTORS

文件：151.09 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVCEO(SUS)= 100V(Min) • Complement to type PMD11K100 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications

文件：215.26 Kbytes 页数：2 Pages

ISC

无锡固电