isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC=4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplif

文件：294.37 Kbytes 页数：2 Pages

ISC

无锡固电

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Silicon NPN Darlington Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):2.0V(Max) @IC= 4A APPLICATIONS · Designed for use in audio frequency power amplifier applications

文件：215.54 Kbytes 页数：2 Pages

ISC

无锡固电

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

文件：60.43 Kbytes 页数：1 Pages

CENTRAL