Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

文件：60.43 Kbytes 页数：1 Pages

CENTRAL

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION • High DC current gain • Collector-Emitter Breakdown Voltage - V(BR)CEO= 60V(Min) • Complement to type PMD1701K APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications

文件：215.6 Kbytes 页数：2 Pages

ISC

无锡固电

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

文件：60.43 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

文件：60.43 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications. MARKING: FULL PART NUMBER

文件：54.11 Kbytes 页数：1 Pages

CENTRAL

SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications. MARKING: FULL PART NUMBER

文件：54.11 Kbytes 页数：1 Pages

CENTRAL

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL