PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching application

文件：79.16 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. FEATURES • ’Trench’ technology •

文件：111.85 Kbytes 页数：12 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.64 Kbytes 页数：2 Pages

ISC

无锡固电

NPN power transistor with integrated diode

General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package. Features and benefits • High typical DC current gain • Fast switching • High voltage capability • Integrate

文件：438.34 Kbytes 页数：13 Pages

WEEN

瑞能半导体

NPN power transistor with integrated diode

General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO-220AB) plastic package. Features and benefits • Low thermal resistance • Fast switching • High voltage capability • Integrated anti-parallel E

文件：504.95 Kbytes 页数：15 Pages

WEEN

瑞能半导体

NPN power transistor with integrated diode

General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. Features and benefits ■ Fast switching ■ High voltage capability ■ Integrated anti-parallel E-C diode ■ Low thermal resistance A

文件：190.51 Kbytes 页数：14 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.98 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching

文件：269.78 Kbytes 页数：14 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 67mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.85 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 (D-PAK). Features ■ Fast Switching ■ TrenchMOSTM technology. Applications ■ DC-to-DC converters ■ General p

文件：240.51 Kbytes 页数：12 Pages

PHI

飞利浦