isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.2 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.83 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

文件：94.74 Kbytes 页数：10 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：72.46 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：220.35 Kbytes 页数：14 Pages

恩XP

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.00397 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.99 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

文件：55.33 Kbytes 页数：7 Pages

PHI

飞利浦