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PHD34NQ10T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD36N03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD37N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHD37N06LT

N-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHD37N06LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD38N02LT

TrenchMOS logic level FET

Description N-channellogiclevelfield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB38N02LTinSOT404(D2-PAK) PHD38N02LTinSOT428(D-PAK). Features ■Lowon-stateresistance ■2.5Vgatedrive. Applications ■Linearregulatorfor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHD38N02LT

N-channel TrenchMOS logic level FET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology. 1.2Features 1.3Applications nLinearregulatorforDouble-DataRate(DDR)memory nLowon-stateresistancen2.5Vgatedrive

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHD38N02LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHD3N20E

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHD3N20E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

技术参数

  • Package name:

    DPAK

  • Product status:

    Production

  • Channel type:

    N

  • Number of transistors:

    1

  • V_DS [max] (V):

    30

  • R_DSon [max] @ V_GS = 10 V (mΩ):

    5.5

  • R_DSon [max] @ V_GS = 5 V (mΩ):

    7.5

  • T_j [max] (°C):

    175

  • I_D [max] (A):

    75

  • Q_GD [typ] (nC):

    8

  • P_tot [max] (W):

    166

  • Q_r [typ] (nC):

    33

  • V_GSth [typ] (V):

    1.9

  • Automotive qualified:

    N

  • C_iss [typ] (pF):

    2180

  • C_oss [typ] (pF):

    600

  • Date:

    2011-01-05

供应商型号品牌批号封装库存备注价格
PHI
05+
原厂原装
5051
只做全新原装真实现货供应
询价
恩XP
1415+
TO-252
28500
全新原装正品,优势热卖
询价
PHI
11+
SOT252
5000
原装现货价格有优势量多可发货
询价
恩XP
13+
15039
原装分销
询价
PHI
23+
TO252
12300
询价
恩XP
TO252
5000
正品原装--自家现货-实单可谈
询价
24+
QFP
68
真实现货库存
询价
PHI
24+
SOT-263
4897
绝对原装!现货热卖!
询价
恩XP
23+
SOT428
48100
原装正品,假一罚十
询价
PHI
2020+
SOT428
64
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多PHD供应商 更新时间2025-7-27 9:17:00