PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

文件：55.33 Kbytes 页数：7 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.99 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Logic level FET

恩XP

恩智浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

飞利浦