PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

文件：55.33 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.99 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Logic level FET

恩XP

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

文件：107.34 Kbytes 页数：3 Pages

MOSPEC

统懋

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

文件：104.43 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：101.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体