N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：103.08 Kbytes 页数：10 Pages

PHI

PHI

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Low on-state resistance • Fast switching

文件：72.46 Kbytes 页数：7 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：220.35 Kbytes 页数：14 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.00397 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS™ transistor

GENERAL DESCRIPTION\nN-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology.FEATURES\n• ’Trench’technology\n• Low on-state resistance\n• Fast switching • ’Trench’technology\n• Low on-state resistance\n• Fast switching;

恩XP