TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is sup

文件：79.11 Kbytes 页数：10 Pages

PHI

飞利浦

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

文件：896.95 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Linear regulator for Double-Data Rate (DDR) memory n Low on-state resistance n 2.5 V gate drive

文件：206.38 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS logic level FET

Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ 2.5 V gate drive. Applications ■ Linear regulator for

文件：252.6 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.78 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.09 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

文件：56.81 Kbytes 页数：7 Pages

PHI

飞利浦

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

文件：56.85 Kbytes 页数：7 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.09 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.19 Kbytes 页数：2 Pages

ISC

无锡固电