N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Suita

文件：202.28 Kbytes 页数：12 Pages

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N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK). Features ■ Low on-state resistan

文件：292.53 Kbytes 页数：14 Pages

PHI

飞利浦

TrenchMOS??logic level FET

Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP82NQ03LT in SOT78 (TO-220AB) PHB82NQ03LT in SOT404 (D2-PAK) PHD82NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate charge

文件：274.03 Kbytes 页数：14 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD83N03LT in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC conv

文件：282.98 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible Appl

文件：102.5 Kbytes 页数：11 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 75A@ TC=25℃ Drain Source Voltage -VDSS= 25V(Min) Static Drain-Source On-Resistance -RDS(on) = 7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD95N03LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC conver

文件：282.09 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ● Low conductio

文件：218.01 Kbytes 页数：13 Pages

恩XP