N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK). Features ■ Low on-state resistan

文件：292.53 Kbytes 页数：14 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Suita

文件：202.28 Kbytes 页数：12 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：1.01684 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel enhancement mode field-effect transistor

General description\nLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.Features and benefits\n■ Suitable for high

恩XP