首页>PHD78NQ03LT>规格书详情
PHD78NQ03LT中文资料N-channel enhancement mode field-effect transistor数据手册恩XP规格书
PHD78NQ03LT规格书详情
描述 Description
General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.Features and benefits
■ Suitable for high frequency applications due to fast switching characteristics
■ Suitable for logic level gate drive sources
技术参数
- 型号:
PHD78NQ03LT
- 功能描述:
MOSFET TAPE13 MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
22+ |
SOT428 |
18000 |
原装正品 |
询价 | ||
恩XP |
19+ |
TO-252 |
20000 |
询价 | |||
恩XP |
24+ |
TO-252 |
504369 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
PHI |
25+ |
TSSOP |
18000 |
原厂直接发货进口原装 |
询价 | ||
恩XP |
22+ |
TO252 |
3000 |
原装正品,支持实单 |
询价 | ||
PHI |
2025+ |
TO-252 |
5185 |
全新原厂原装产品、公司现货销售 |
询价 | ||
N |
23+ |
TO-252 |
6000 |
原装正品,支持实单 |
询价 | ||
PHI |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
询价 | ||
恩XP |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
7000 |
询价 | |||
恩XP |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |