PHD13003C

NPN power transistor with integrated diode

Generaldescription Highvoltage,highspeed,planarpassivatedNPNpowerswitchingtransistorwithintegratedanti-parallelemitter-collectordiodeinaSOT54(TO-92)plasticpackage. Featuresandbenefits •HightypicalDCcurrentgain •Fastswitching •Highvoltagecapability •Integrate

PHD13003C_15

NPN power transistor with integrated diode

PHD13003C,126

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A TO92-3

PHD13003C,412

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A TO92-3

13003

SWITCHINGREGULATORAPPLICATION.

13003

Series810&822EconomyVertisocketw/BifurcatedContacts

FEATURES •High-volumeVerticalDisplayMountingApplications •UsefulforConnectionofBoard-to-BoardJumpersandDIPSwitches,aswellasLEDDevices

13003

powerswitchingapplications

TRANSISTOR(NPN) FEATURES •powerswitchingapplications

13003

HIGHVOLTAGESWITCHINGAPPLICATIONS

13003AD

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

13003ADA

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION DESCRIPTION TheUTC13003ADAisasiliconNPNpowerswitchingtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighcollector-basebreakdownvoltage,lowreverseleakagecurrentandhighreliability,etc. TheUTC

13003ADG

NPNSILICONPOWERTRANSISTOR

DESCRIPTION Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220Vapplicationsinswitchmode. FEATURES *ReversebiasedSOAwithinductiveload@TC=100°C *Inductiveswitchingmatr

13003B

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

13003B

Nytyes®withStainlessSteelLockingDevice

13003B

Nytyes®withStainlessSteelLockingDevice

13003BDG

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

13003BR

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:1.25WTamb=25 Collectorcurrent ICM:1.5A Collector-basevoltage V(BR)CBO:700V

13003BR

NPNEPITAXIALPLANARTRANSISTOR

Description •HighVoltage,HighSpeedPowerSwitch •SwitchRegulators •PWMInvertersandMotorControls •SolenoidandRelayDrivers •DeflectionCircuits

13003BR

TRIPLEDIFFUSEDNPNTRANSISTOR(SWITCHINGREGULATOR,HIGHVOLTAGEANDHIGHSPEEDSWITCHING)

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGEANDHIGHSPEED SWITCHINGAPPLICATION. FEATURES •ExcellentSwitchingTimes :ton=1.1μS(Max.),tf=0.7μS(Max.),atIC=1A •HighCollectorVoltage:VCBO=700V.

13003BR

NPNEPITAXIALPLANARTRANSISTOR

Description TheHMJE13003Tisdesignedforhighvoltage.Highspeedswitching inductivecircuitsandamplifierapplications. Features •HighSpeedSwitching •LowSaturationVoltage •HighReliability

13003BS

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION