NPN power transistor with integrated diode

General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package. Features and benefits • High typical DC current gain • Fast switching • High voltage capability • Integrate

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瑞能半导体

NPN power transistor with integrated diode

文件：144.55 Kbytes 页数：12 Pages

PHI

飞利浦

High voltage bipolar transistors for lighting, SMPS and industrial applications

High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT54 (TO92) plastic package • Fast switching\n• High voltage capability\n• Very low switching and conduction losses;

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瑞能半导体

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A TO92-3

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瑞能半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A TO92-3

WEEN

瑞能半导体