TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 (D-PAK). Features ■ Fast Switching ■ TrenchMOSTM technology. Applications ■ DC-to-DC converters ■ General p

文件：240.51 Kbytes 页数：12 Pages

PHI

飞利浦

TrenchMOS™ standard level FET

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.\nProduct availability:\n  PHD16N03T in SOT428 (D-PAK).\n  ■ Fast Switching\n■ TrenchMOSTM technology.Applications\n■ DC-to-DC converters\n■ General purpose switch.;

恩XP

恩智浦

16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：107.16 Kbytes 页数：8 Pages

Intersil

16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：130.419 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes 页数：8 Pages

VBSEMI

微碧半导体