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CED60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

LMAK60P03

-30VP-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

NCE60P03R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE60P03Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

RFG60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFG60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

STTH60P03S

ULTRAFASTRECTIFIERPDPENERGYRECOVERY

DESCRIPTION TheSTTH60P03SWisanUltrafastRecoveryPowerRectifierdedicatedtoenergyrecoveryinPDPapplication. ThekeyparametersoftheDERCdiodefortheenergyrecoverycicuithavebeenoptimizedinordertodecreasepowerlosses. FEATURESANDBENEFITS ■Ultrafastrecovery

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH60P03SW

ULTRAFASTRECTIFIERPDPENERGYRECOVERY

DESCRIPTION TheSTTH60P03SWisanUltrafastRecoveryPowerRectifierdedicatedtoenergyrecoveryinPDPapplication. ThekeyparametersoftheDERCdiodefortheenergyrecoverycicuithavebeenoptimizedinordertodecreasepowerlosses. FEATURESANDBENEFITS ■Ultrafastrecovery

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

UTT60P03

-60A,-30V,P-CHANNELPOWERMOSFETS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

WSF60P03

P-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微硕半岛体深圳市龍華區大浪街道高峰社區忠信路9號匯億大廈807

供应商型号品牌批号封装库存备注价格
INTERSIL
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Essentra
22+
NA
4930
加我QQ或微信咨询更多详细信息,
询价
PD
22+
TO-220
31361
原装正品现货
询价
PD
19+
TO-220
20000
原装现货假一罚十
询价
PD
1942+
TO-220
9852
只做原装正品现货或订货!假一赔十!
询价
POWERDEVICE
2022+
130
全新原装 货期两周
询价
PD
21+
TO-220
35200
一级代理/放心采购
询价
PowerDevi
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
120000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PG
24+
TO220
5000
只做原装公司现货
询价
更多PFP60P03供应商 更新时间2024-6-21 16:39:00