Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectificatio

文件：161.77 Kbytes 页数：16 Pages

PHI

飞利浦

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

文件：826.38 Kbytes 页数：16 Pages

NEXPERIA

安世

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23118 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

PHC21025 - Complementary intermediate level FET

Complementary intermediate level FET - Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industri ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

Complementary intermediate level FET

文件：249.14 Kbytes 页数：16 Pages

PHI

飞利浦