Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

文件：98.6 Kbytes 页数：7 Pages

PHI

飞利浦

Dual N-channel TrenchMOS logic level FET

General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Suitable

文件：204.1 Kbytes 页数：13 Pages

恩XP

Dual N-channel TrenchMOS logic level FET

1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

文件：767.02 Kbytes 页数：13 Pages

NEXPERIA

安世

PHN203 - Dual N-channel TrenchMOS logic level FET

Dual N-channel TrenchMOS logic level FET - Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Suitable for high frequency applications due to fast switching characteristics\n·Suitable for logic level gate drive sources;

Nexperia

安世