PHN1013

N-channel enhancement mode MOS transistor

DESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorusing‘trench’technology,inan8-pinplasticSOT96-1(SO8)package. FEATURES •Verylowon-stateresistance. APPLICATIONS •DCtoDCconverters •Generalpurposeswitchingapplications.

PM-1013

SMALLOUTLINE10/100BASE-TISOLATIONTRANSFORMERS

QPA1013D

6??18GHz10WGaNPowerAmplifier

QPA1013D

6??8GHz10WGaNPowerAmplifier

QPD1013

150W,65V,DC??2.7GHz,GaNRFTransistor

QPD1013

150W,65V,DC–2.7GHz,GaNRFTransistor

ProductFeatures Frequency:DCto2.7GHz OutputPower(P3dB):178W1 LinearGain:21.8dB1 TypicalPAE3dB:64.81 OperatingVoltage:65V Lowthermalresistancepackage CWandPulsecapable 7.2x6.6mmpackage

QPD1013SQ

150W,65V,DC??2.7GHz,GaNRFTransistor

QPD1013SQ

150W,65V,DC–2.7GHz,GaNRFTransistor

ProductFeatures Frequency:DCto2.7GHz OutputPower(P3dB):178W1 LinearGain:21.8dB1 TypicalPAE3dB:64.81 OperatingVoltage:65V Lowthermalresistancepackage CWandPulsecapable 7.2x6.6mmpackage

QPD1013SR

150W,65V,DC??2.7GHz,GaNRFTransistor

QPD1013SR

150W,65V,DC–2.7GHz,GaNRFTransistor

ProductFeatures Frequency:DCto2.7GHz OutputPower(P3dB):178W1 LinearGain:21.8dB1 TypicalPAE3dB:64.81 OperatingVoltage:65V Lowthermalresistancepackage CWandPulsecapable 7.2x6.6mmpackage