Novelty LED Backlit Panel Lights NOVA Series forT15/T24 Lay-On Ceilings

文件：1.32271 Mbytes 页数：6 Pages

CYANLITE

飒恩科技

Backlite LED Panel Lights IP65 for T15/T24 Lay-On Ceilings at Damp Locations

文件：913.56 Kbytes 页数：6 Pages

CYANLITE

飒恩科技

丝印：PB4021NZ；Package：SC-73；20 V, 8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：377.04 Kbytes 页数：15 Pages

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丝印：PB4021PZ；Package：SC-73；20 V, 6.6 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB)

文件：729.66 Kbytes 页数：15 Pages

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丝印：PB4021PZ；Package：SOT223；20 V, 6.6 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：377.36 Kbytes 页数：15 Pages

NEXPERIA

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丝印：PB4032NZ；Package：SC-73；30 V, 4.9 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

文件：737.96 Kbytes 页数：15 Pages

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丝印：PB4032NZ；Package：SOT223；30 V, 4.9 A NPN low VCEsat transistor

1. General description NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capabi

文件：310.05 Kbytes 页数：14 Pages

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丝印：PB4032PZ；Package：SC-73；30 V, 4.4 A PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

文件：733.02 Kbytes 页数：15 Pages

NEXPERIA

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丝印：PB4032PZ；Package：SOT223；30 V, 4.4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capab

文件：303.85 Kbytes 页数：14 Pages

NEXPERIA

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丝印：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ High collector curren

文件：747.94 Kbytes 页数：15 Pages

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