丝印：PB4032NZ；Package：SC-73；30 V, 4.9 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

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安世安世半导体(中国)有限公司

30 V, 4.9 A NPN low VCEsat (BISS) transistor

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丝印：PB4032NZ；Package：SOT223；30 V, 4.9 A NPN low VCEsat transistor

1. General description NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capabi

文件：310.05 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 4.9 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4032PZ. • Low collector-emitter saturation voltage VCEsat\n• Optimized switching time\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) ar;

Nexperia

安世

30 V, 4.9 A NPN low VCEsat (BISS) transistor

恩XP

恩智浦

30 V, 4.9 A NPN low VCEsat transistor

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 4.9A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司