丝印：PB4032NZ；Package：SOT223；30 V, 4.9 A NPN low VCEsat transistor

1. General description NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capabi

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NEXPERIA

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30 V, 4.9 A NPN low VCEsat transistor

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30 V, 2.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Bo

文件：304.16 Kbytes 页数：15 Pages

NEXPERIA

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CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

文件：71.79 Kbytes 页数：3 Pages

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Double Coated Urethane Foam Tapes

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Heyco-Flex™ VI Liquid Tight Conduit Fittings

文件：156.61 Kbytes 页数：1 Pages

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