30 V, 2.7 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032ND. Features ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current

文件：190.86 Kbytes 页数：14 Pages

恩XP

丝印：ZG；Package：SC-74；30 V, 2.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Bo

文件：304.16 Kbytes 页数：15 Pages

NEXPERIA

安世

30 V, 2.7 A PNP low VCEsat (BISS) transistor

文件：190.86 Kbytes 页数：14 Pages

PHI

PHI

30 V, 2.7 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 Surface-Mounted Device (SMD) plastic package. • AEC-Q101 qualified\n• Energy saving due to less heat generation\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Low collector-emitter saturation voltage VCEsat\n• Smaller required PCB area than for conventional transistors\n• Switching time optimi;

Nexperia

安世

Package：SC-74，SOT-457；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 2.7A 6TSOP

Nexperia USA Inc.