| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：PB4032PZ；Package：SC-73；30 V, 4.4 A PNP low VCEsat (BISS) transistor Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrint | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：PB4032PZ；Package：SOT223；30 V, 4.4 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4032NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Optimizedswitchingtime •Highcollectorcurrentcapab | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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