丝印：PB4041PZ；Package：SC-73；60 V, 5.7 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB)

文件：721.41 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PB4041PZ；Package：SC-73；60 V, 5.7 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：350.43 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PB4041PZ；Package：SOT223；60 V, 5.7 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：292.72 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司