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PBSS4041PZ

Marking:PB4041PZ;Package:SC-73;60 V, 5.7 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4041PZ-Q

Marking:PB4041PZ;Package:SC-73;60 V, 5.7 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4041PZ-Q

Marking:PB4041PZ;Package:SOT223;60 V, 5.7 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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