PBSS5540Z-Q芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
PBSS5540Z	文件：238.78 Kbytes Page：9 Pages	丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor 1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. 3. Applications • Supply l 文件：238.78 Kbytes 页数：9 Pages	NEXPERIA 安世	NEXPERIA
PBSS5540Z-Q	文件：222.84 Kbytes Page：10 Pages	丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor 1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Qualified according to AEC 文件：222.84 Kbytes 页数：10 Pages	NEXPERIA 安世	NEXPERIA
PB5540	文件：238.78 Kbytes Page：9 Pages	40 V low VCEsat PNP transistor 1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. 3. Applications • Supply l 文件：238.78 Kbytes 页数：9 Pages	NEXPERIA 安世	NEXPERIA

更多PB5540供应商更新时间2026-1-17 14:01:00