丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Qualified according to AEC

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40 V low VCEsat PNP transistor

PNP low VCEsat transistor in a SOT223 plastic package.\n NPN complement: PBSS4540Z-Q • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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安世

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文件：402.69 Kbytes 页数：6 Pages

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40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：633.75 Kbytes 页数：6 Pages

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40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：422.45 Kbytes 页数：6 Pages

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