丝印：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ High collector curren

文件：747.94 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：289.24 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：372.01 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司