PBSS4021PZ-Q中文资料安世数据手册PDF规格书

1. General description

PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD)

plastic package.

NPN complement: PBSS4021NZ-Q

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High energy efficiency due to less heat generation

• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)