| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：PB4021PZ；Package：SC-73；20 V, 6.6 A PNP low VCEsat (BISS) transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB) | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：PB4021PZ；Package：SOT223；20 V, 6.6 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4021NZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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