丝印：PB4021PZ；Package：SC-73；20 V, 6.6 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB)

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20 V, 6.6 A PNP low VCEsat (BISS) transistor

文件：196.43 Kbytes 页数：15 Pages

恩XP

丝印：PB4021PZ；Package：SOT223；20 V, 6.6 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：377.36 Kbytes 页数：15 Pages

NEXPERIA

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20 V, 6.6 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4021NZ. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventiona;

Nexperia

安世

20 V, 6.6 A PNP low VCEsat (BISS) transistor

恩XP

20 V, 6.6 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4021NZ-Q

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 6.6A SOT223

Nexperia USA Inc.