MOSFET - Power, Single N-Channel 100 V, 3.1 m, 169 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Product • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS

文件：138.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 3.1 m, 169 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Product • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS

文件：138.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single, N-Channel 100 V, 3.1mΩ, 169A

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC-Q101 Qualified and PPAP Capablwe\n• Automotive Qualified\n• RoHS Compliant;

ONSEMI

安森美半导体

QFP208

NEXTCHIP

上传：深圳市柯尔基电子有限公司

QFP128

NEXTCHIP

上传：深圳广友电子有限公司