isc P-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=-222A@ TC=25℃ ·Drain Source Voltage- VDSS= -40V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control

文件：353.01 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：2D3P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：278.61 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single P-Channel -40 V, 2.7 m, -183 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS3D0P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：248 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：3D0P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.7 m, -183 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS3D0P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：248 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

文件：132.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

文件：132.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

文件：132.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：201.94 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：201.94 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：201.94 Kbytes 页数：8 Pages

ONSEMI

安森美半导体