MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：278.61 Kbytes 页数：9 Pages

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isc P-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=-222A@ TC=25℃ ·Drain Source Voltage- VDSS= -40V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control

文件：353.01 Kbytes 页数：3 Pages

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丝印：2D3P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：278.61 Kbytes 页数：9 Pages

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安森美半导体

NVMFS2D3P04M8L Power MOSFET, Single, P-Channel, -40 V, 2.2 mΩ, -222 A

Power MOSFET−40 V, 2.2 mΩ, −222 A, Single P−Channel • Low RDS (on) \n• minimize Conduction Losses\n• High Current Capability\n• Avalanche Energy Specified\n• NVMFWS2D3P04M8LT1G − Wettable Flanks Product\n• NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; EC−Q101Qualified and PPAP Capable\n• These;

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安森美半导体