丝印：2D3P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：278.61 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：278.61 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

ON
QFN8

ON

上传：深圳市鼎欣微电子有限公司

ON
8-PowerTDFN

ON

上传：深圳市广弘电子有限公司

ON
SO-8FL

ON

上传：深圳市鑫炜纳电子有限公司